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Datasheet, V1.0, April 2009
BTS50080-1EGA
Smart High-Side Power Switch PROFETTM
Automotive
Smart High-Side Power Switch BTS50080-1EGA
1 2 2.1 2.2 3 3.1 3.2 4 4.1 4.2 4.3 4.4 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 7.1 7.2 7.3 7.4 7.5 8 8.1 8.2 9 10
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS50080-1EGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching losses for resistive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inverse Operation Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage shutdown + restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infineon(R) INTELLIGENT LATCH - fault acknowledge and latch reset . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection - ReverSaveTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Load Protection, Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis during ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis during OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 8 9 9
10 10 10 10 11 12 14 15 16 18 18 18 19 19 20 21 21 21 22 23 23 24 26 27 28
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Hints for PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Datasheet
2
V1.0, 2009-04-06
Smart High-Side Power Switch PROFETTM
BTS50080-1EGA
1
Features * * * * * * * * * * *
Overview
Part of scalable product family 3.3 and 5V compatible, ground referenced CMOS compatible inputs Optimized electromagnetic compatibility (EMC) Very low standby current Stable behavior at under-voltage Secure load turn-off while device ground disconnected ReverSaveTM - Reverse battery protection without external components Inverse load current capability Infineon INTELLIGENT LATCH Green Product (RoHS compliant) AEC qualified
PG-DSO-12-16
Operating voltage range Minimum power stage over-voltage protection Typical on-state resistance at Tj = 25C Maximum on-state resistance at Tj = 150C Typical nominal load current Minimum short circuit shutdown Threshold (SCT)
Vbb(ext)
VDS(CL) RDS(ON) RDS(ON)
6 .. 28V 42 V 8 m 16 m 13 A 80 A 10 A
IL(nom) IL(SC)high
Maximum stand-by current for whole device with load for Tj 85C Ibb(OFF) Description
The BTS50080-1EGA is a single channel high-side power switch in PG-DSO-12-16 package providing embedded protective functions including ReverSaveTM and Infineon INTELLIGENT LATCH. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart power chip on chip technology. The BTS50080-1EGA has ground referenced CMOS compatible inputs. ReverSaveTM is a protection feature that causes the power transistor to switch on in case of reverse polarity. As a result, the power dissipation is reduced. Infineon INTELLIGENT LATCH ensures a latched switch-off and reporting in case of fault condition. The Infineon ENHANCED SENSE pin IS provides a sophisticated diagnostic feedback signal including current sense functionality, open load in ON-state (via sense signal) and open load and short to battery in OFF-state. Diagnostic reporting can be enabled and disabled by the DEN-Pin in ON-state and OFF-state. In OFF-state, open load detection can also be disabled by the DEN-Pin to optimize stand-by current.
Type BTS50080-1EGA Datasheet
Package PG-DSO-12-16 3
Marking BTS 50080A V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Overview Protective Functions * * * * * * * * * * Short circuit protection with latch Thermal shutdown with latch Infineon INTELLIGENT LATCH - reset able latch resulting from protective switch-off ReverSaveTM - Reverse battery protection by self turn on of power MOSFET Inverse load current capability - Inverse operation function Under voltage shutdown with restart Over voltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD)
Diagnostic Functions * * * * * * Enable function for diagnosis and reporting Provides capability for muliplexing of the reporting signal from multiple devices by DEN pin. Provides analog sense signal of load current in normal operation mode Provides defined fault current signal in case of overload, over temperature and short circuit to ground Open load detection in ON-state by load current sense Open load and short to battery detection
In ON-state:
In OFF-State:
Applications * * * * C compatible high-side power switch with diagnostic feedback for 12 V system grounded loads All types of resistive, inductive and capacitive loads Most suitable for loads with high inrush currents, such as glow plugs, PTC heaters, or lamps Replaces electromechanical relays, fuses and discrete circuits
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Block Diagram and Terms
2
2.1
Block Diagram and Terms
Block Diagram
control chip
base chip V bb
internal power supply IN
voltage sensor over temperature driver logic gate control & charge pump T clamp for inductive load over current switch-off OUT
DEN IS
ESD protection
load current sense open load detection @OFF
GND
Figure 1 Block Diagram
Overview.emf
2.2
Terms
Vbb I IN IN V IN VD EN I D EN DEN GND IG N D
Te rms.e mf
Ib b VBB OUT I IS IS IL
Vb IS
VD S or V O N or V O FF
V OU T V IS
RIS
Figure 2
Terms
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Pin Configuration
3
3.1
Pin Configuration
Pin Assignment BTS50080-1EGA
(top view)
GND IN IS DEN NC NC
1 2 3 4 5 6
12 11 10 9 8 7
NC OUT OUT OUT OUT NC
P DS O1 2 .e mf
heatslug (V bb)
Figure 3 Pin Configuration
3.2
Pin 1 2 3
Pin Definitions and Functions
Symbol I/O Function GND IN IS I O Ground connection for control chip Input: activates power switch. Has an internal pull down resistor. Sense Output: With diagnosis enabled, provides a sense current proportional to the load current during normal operation. During open load in ON provides no current. Provides a defined fault current in case of overload, over temperature or short circuit during ON or open load or short to battery during OFF (see Table 1 "Truth Table" on Page 24) Diagnosis ENable: with high level enables diagnosis reporting and open load / short to battery detection in OFF. Resets a protective, latched switch-off by falling edge acknowledgement. Has an internal pull down resistor. Not connected Output: output to the load; pins 8 to 11 must be externally shorted together1) Supply Voltage: positive power supply for logic and output
4
DEN
I
5, 6, 7, 12
NC
O -
8, 9, 10, OUT 11 exposed Vbb PAD
1) Not shorting all output pins will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy.
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
General Product Characteristics
4
4.1
General Product Characteristics
Absolute Maximum Ratings
Operation outside the parameters listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability Absolute Maximum Ratings 1) Tj = -40 C to +150 C (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Supply Voltage 4.1.1 4.1.2 4.1.3 4.1.4 Supply voltage Reverse polarity voltage Vbb
-Vbb(rev)
Unit
Conditions
Max. 0 0 0 42 16 28 42 V V V V
Tj = 25 C 2)
3)
Supply voltage for short circuit protection Vbat(SC) (single pulse) Supply Voltage for Load Dump protection
Vbb(LD)
RI = 2 4), RL = 1 td =400 ms Tj = 25 C
2)
Input Pins 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.1.11 4.1.12 Voltage at IN pin Current through IN pin Voltage at DEN pin Current through DEN pin Voltage at sense pin Current through sense pin IS Load current 6) Inductive load switch-off energy (single pulse) Inductive load switch-off energy (repetitive pulses)
VIN IIN VDEN IDEN VIS IIS |IL| EAS
-0.3 -2 -0.3 -2 -0.3 -10
2)5)
6 2 6 2
V mA V mA V mA A mJ
2)
Output Pins
VZIS
10
IL(SC)
-
Power Stages 125
4.1.13
EAR
-
63
mJ
Vbb=13.5V7), IL(0) = 50A, Tj(0) 150 C Vbb=13.5V7)8), IL(0) = 20A, Tj(0) 105 C
according to EIA/JESD 22-A 114B
Temperatures 4.1.14 4.1.15 4.1.16 4.1.17 Junction temperature Dynamic temperature increase while switching Storage temperature ESD susceptibility HBM IN, DEN, IS, Vbb, OUT Vbb versus OUT
Tj
Tj
-40 -55
150 60 150
C K C kV
Tstg VESD
ESD Susceptibility -2 -4 2 4
1) Not subject to production test, specified by design. 2) t 2 min
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
General Product Characteristics
3) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 15. 4) Vbb(LD) is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. RI is the internal resistance of the Load Dump pulse generator 5) Valid at disabled diagnosis. 6) Over current threshold switch-off is a protection feature. Protection features are not designed for continuous repetitive operation. 7) See also Chapter 5.5 . 8) Resuls from simulation of temperature swing. Not subject to production test, specified by design.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
4.2
Pos.
Functional Range
Parameter Symbol Min. Limit Values Max. 9 6 16 281) V V mA 4 24 59 A 2)
Unit
Conditions
Supply Voltage 4.2.1 4.2.2 4.2.3 Supply voltage range for normal operation
Vbb(nor)
Extended supply voltage range for Vbb(ext) operation Operating current VIN = 0V, VDS > VDS(OL) VIN = 5V Load current range for sense functionality 1)
IGND
4.2.4
IL(IS)
1.5
VDEN = 5V, VIS < 5.5V, Vbb = Vbb(nor) IIS - IIS(LH) > 30 A, IIS(lim) > IIS, Vbb = Vbb(nor), VIN = VDEN = 5 V, VbIS > 5 V
-
4.2.5
Junction temperature
Tj
-40
150
C
1) Not subject to production test, specified by design 2) In extended supply voltage range, the device is functional but electrical parameters are not specified.
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table.
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
General Product Characteristics
4.3
Pos. 4.3.1 4.3.1 4.3.1
1) 2) 3) 4)
Thermal Resistance
Parameter Junction to case 1) Control chip to case 1) Junction to ambient 1) device on PCB4) Symbol Min. Limit Values Typ. 40 27 Max. 1.7 K/W K/W K/W 2) 3)
Unit
Conditions
Rthjc Rthj(cc)c Rthja
-
-
Not subject to production test, specified by design Specified Rthjc value is simulated at natural convection on a cold plate setup. Ta = 25 C. Specified Rthj(cc)c value is simulated at natural convection on a cold plate setup. Ta = 25 C, IL = 0A. Specified Rthja value and Figure 4 are according Jedec JESD51_7 at natural convection on FR4 2s2p board. The BTS50080-1EGA was measured on a 76.2 x 114.3 x 1.6 mm board with 2 inner copper layers (2 x 70m Cu, 2 x 35m Cu) applying power losses of 1.4W at the channel. According to JESD51-5 a thermal via array under the exposed pad contacted the first inner copper layer. Ta = 25 C.
Figure 4 shows the typical transient thermal impedance of BTS50080-1EGA.
= WK-$
.:

Figure 4

VHF
W3
Transient Thermal Impedance Zth(JA)=f(tp) 4)
4.4
Pos. 4.4.1 4.4.2
Package
Parameter Jedec humidity category acc. J-STD-020-D Value MSL3 Test Conditions -
Jedec classification temperature acc. J-STD-020-D 260C
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
5
5.1
Power Stages
Input Circuit
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.
Figure 5 shows the input circuit of the BTS50080-1EGA. The input resistor to ground ensures that the input signal is low in case of open input pin. The zener diode protects the input circuit against ESD pulses.
IN RIN GND
Input.emf
Figure 5
Input Circuit
A high signal at the input pin causes the DMOS to switch on.
5.2
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage Vbb and the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is described in Chapter 6.5.
12,5
R DS(ON) 10 m
7,5 5 2,5 0 -40
Figure 6
Vbb = 13.5 V
typ.
5 '621 P 9 EEX
Tj = 25C
W\S
0
40
80
C 120
160
Tj
Typical On-State Resistance
9 9 EE
5.3
Output Timing
The power stage is designed for high side configuration (Figure 9).
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages The power stage has a defined switching behavior. Defined slew rates as well as edge shaping support PWM'ing of the load while achieving lowest EMC emission at minimum switching losses.
V IN VIN (H ),min V IN(L ),ma x tO N tr tO F F tf t
VO U T 90%
50% 30% 10%
(dV/ dt) O N
(dV/ dt) O F F t
Ib b t sta n d b y I b b(O F F ) t
S witch On. e mf
Figure 7
Switching a Load (resistive)
5.4
Switching losses for resistive loads
Switching the device on and off may cause switching losses EON and EOFF. In case of a resistive load, the switching losses depend on the supply voltage Vbb as well as on the load current IL and the junction temperature Tj. Figure 8 shows this dependencies of the switching losses.
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
E ON, 30 E OFF
25 mJ 20 15 10 5 0 0 5
typ., T j = 25C, R L = 1
E ON, 100 E OFF mJ
10
typ., T j = 25C, V bb = 13.5V
E OFF
To be added after final silicon available.
E ON
1
E OFF
E ON
0,1 10 15 20 25 V
V bb
30
0,1
1
10 RL
E ON, 4 E OFF
mJ 3
E OFF
E ON
2
1
0 -50
Figure 8
typ., V bb=13.5V, R L = 1
0 50 100 C 150 Tj
Typical switching losses EON and EOFF
5.5
Output Inductive Clamp
When switching off inductive loads, the output voltage VOUT drops below ground potential due to the inductive properties of the load ( -diL/dt = -vL/L ; -VOUT -VL ).
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
control chip
VBB base chip
V bb
charge pump
VDS(CL) iL VOUT LOAD
OUT
GND
OutputClamp.emf
Figure 9
Output Clamp
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level. At nominal battery voltage the output is clamped to VOUT(CL). At over voltages the output is clamped to VDS(CL). See Figure 9 and Figure 10 for details. The maximum allowed load inductance is limited.
V OUT Vbb
ON
OFF VDS(CL) t
V bb VDS(CL)
V OUT(CL) Vbb IL t VOUT VOUT(CL)
InductiveLoad.emf
Figure 10
Switching an Inductance
Maximum Load Inductance While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1EGA. This energy can be calculated by the following equation:
- V OUT ( CL ) RL IL LE = ( V bb + V OUT ( CL ) ) ------------------------------ ln 1 + ------------------------- + I L -----RL RL V OUT(CL)
In the event of de-energizing very low ohmic inductances (RL0) the following, simplified equation can be used:
V DS(CL) 2 1 E = -- LI L -----------------------------------2 V DS(CL) - V bb
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 11 for the maximum allowed energy dissipation.
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
( $6
P
Tj(0)
= 150C, Vbb = 13.5V
( $5
P
Tj(0)
= 105C, Vbb = 13.5V
$ , /
Figure 11 Maximum energy dissipation1) 2)
$ , /
Note: Clamping overrides all protection functionalities. In order to avoid device destruction resulting from inductive switch-off or over voltage the device has to be operated within the maximum ratings.
5.6
Inverse Operation Capability
The BTS50080-1EGA can be operated in inverse load current condition (+VOUT > +Vbb). The device can not block the current flow during inverse mode. In ON condition a voltage drop across the activated channel of -VON(inv)=RON(inv)*(-IL) can be observed. In OFF condition a voltage drop across the intrinsic body diode of -VOFF(inv)=f(-IL) can be observed. As long as the inverse current does not exceed |-IL| |-IL(inv)| the logic will operate and report according Table 1 and the BTS50080-1EGA will be able to remain in ON mode.
+V bb
control chip VBB base chip
V bb
GND
logic
VON(inv)
OUT
+ Inverse_capability.emf
-I L
Figure 12 Inverse current capability
1) Not subject to production test, specified by design. 2) Resuls for EAR from simulation of temperature swing.
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages Note: Activation of any protection mechanism will not block the current flow. Over temperature detection and current sense is not functional during inverse mode.
5.7
Undervoltage shutdown + restart
The BTS50080-1EGA is supplied by Vbb. The internal logic permanently monitors the supply voltage Vbb. In the event that the supply voltage drops below the under voltage shutdown threshold Vbb(u), the BTS50080-1EGA will switch off. If the supply voltage reaches nominal operating voltage range Vbb(ext), the BTS50080-1EGA will switch on after a delay tdelay(UV), assuming VIN=High. Protective latch is reset by undervoltage shutdown.
Vbb Vbb(ext ) Vbb(u) t VOUT ON Z
Figure 13 Undervoltage shutdown and restart
tdelay(UV) t
Undervoltage .emf
Datasheet
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V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
5.8
Electrical Characteristics: Power Stages
Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. General 5.8.1 Stand-by current Tj = -40 C, Tj = 25 C Tj 85 C 1) Tj = 150 C Stand-by time 1) 2) Undervoltage shutdown1) Undervoltage recovery time L-input level H-input level input hysteresis input pull down resistor On-state resistance Tj=25C Tj=150C Vbb=6V, Tj=25C Vbb=6V, Tj=150C Nominal load current 1)4) Output leakage current Output clamp during switch-off
1)
Parameter
Symbol Min.
Limit Values Typ. Max.
Unit
Conditions
Ibb(OFF)
6 6 8 0.5 5.7 10 100 100 10 10 100 1 6 1.0 5.5 200
A
2)
, |VIN|=|VDEN|0.3V3), VOUT=VIS=0V, t > tstandby, no fault condition |VIN|=|VDEN|0.3V, VOUT=VIS=0V 1)
5.8.2 5.8.3 5.8.4 5.8.5 5.8.6 5.8.7 5.8.8 5.8.9
tstandby Vbb(u) tdelay(UV) VIN(L) VIN(H) VIN(hys) RIN RDS(ON)
-0.3 2.0 50
ms V ms V V mV k m
Input characteristics
-
Output characteristics
VIN=5V, IL=20A
-
8 11.5 10.5 13.5 13 3 18 20 50 51 3 3.5
16 27 100 20 25 5 5 A A V V V V mJ mJ m
5.8.10 5.8.11 5.8.12
IL(nom) IL(OFF)
-VOUT(CL)
16 16
5.8.13
Output clamp during over voltage
VDS(CL)
42 42
5.8.14 5.8.15 5.8.16
Switch-On energy 5 95% VOUT Switch-Off energy 95 5% VOUT Inverse operation on-state resistance Tj=25C Tj=150C
EON EOFF RON(inv)
-
TA = 85 C Tj 150 C VIN=VDEN=0V, VOUT=0V VOUTVbb-VDS(CL)5), IL = 40 mA VOUTVbb-VDS(CL)5), IL = 20 A 1) VDSVbb -VOUT(CL)5), IL = 40 mA VDSVbb -VOUT(CL)5), IL = 20 A 1) Vbb = 13.5 V, RL = 1 VIN = 5 V, IL = -20 A,
no protective switch-off V1.0, 2009-04-06
16
8 11.5
16
Datasheet
Smart High-Side Power Switch BTS50080-1EGA
Power Stages
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. 5.8.17 Parameter Inverse operation output voltage drop Tj=25C Tj=150C Inverse current capability1) Turn-on time to 90%VOUT Turn-off time to 10%VOUT Slew rate On 30 50% VOUT Slew rate Off 50 30% VOUT Tj = -40 C, Tj = 25 C Tj 85 C1) Tj = 150 C Symbol Min.
-VOFF(inv)
Limit Values Typ. Max.
Unit mV
Conditions
VIN=0V, IL = -10 A
-IL(inv)
700 400 -
900 800 A s -
5.8.18 Timings 5.8.19 5.8.20 5.8.21 5.8.22
20
tON
250 250 0.12 0.12 0.12 0.12 500
tOFF
(dV/ dt)ON -(dV/ dt)OFF 0.07 0.07 0.07 0.07 500
s V/s 0.21 V/s 0.23 0.215 0.21
Vbb = 13.5 V RL = 1 Vbb = 13.5 V RL = 1 Vbb = 13.5 V RL = 1 Vbb = 13.5 V RL = 1
1) Not subject to production test, specified by design 2) In case of protective switch-off STANDBY is only reached if the fault was acknowledged while IN=LOW by DEN=HIGH LOW and tstandby expired. See also Chapter 6.4 for details. 3) Tested at VIN=VDEN=0V only 4) according JESD51_7, FR4 2s2p board, 76.2 x 114.3 x 1.6 mm, 2x70m Cu, 2x35m Cu. 5) See Figure 10.
Datasheet
17
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Protection Functions
6
Protection Functions
The BTS50080-1EGA provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are neither designed for continuous nor repetitive operation.
6.1
Short Circuit Protection
The internal logic permanently monitors the load current IL. In the event the load current exceeds the short circuit shutdown threshold (IL>IL(SC)), the device will switch off immediately. Any protective switch off latches the output. Please refer to Figure 14 for details. The protective switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4.
VIN VDEN IL I L(SC) t t
reset latch
reset latch latch
reset
latch
reset
t latch
I_L(SC)_detect.emf
Figure 14
Shutdown by short circuit current detection
Before switching on, the device is measuring the battery voltage Vbb(0). In case Vbb(0) is above Vbb(SCT), the short circuit current threshold IL(SC)high is reduced to a lower level IL(SC)low. Note: In case of a short circuit between OUT and ground, a impedance between Vbat and Vbb pin of the device (see Figure 15) may cause the device's supply voltage to drop below Vbb(u) before short circuit shutdown threshold is reached. In that case, the device will detect an undervoltage condition and behave as described in Chapter 5.7.
6.2
Short Circuit Impedance
The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. Figure 15 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance.
Datasheet
18
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Protection Functions
LSC
5uH Vbb IN OUT LSC RSC
15
H 10 Applicable impedances for: V bat V bat(SC) IL(SC) = IL(SC)High for Vbb < Vbb(SCT); I L(SC) = I L(SC)Low for Vbb Vbb(SCT); 0
L-R.emf
10m Vbat
PROFET
GND
5
LO AD SHORT CIRCUIT
short_circuit.emf
0
10
20
30
m
50 RSC
Figure 15
Short circuit
6.3
Over Temperature Protection
The internal logic permanently monitors the junction temperature of the output stage. In the event of an over temperature (Tj > Tjt) the output will switch off immediately. Please refer to Figure 16 for details.The protective switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also Chapter 6.4.
V IN VDEN t
j
jt
t
latch
reset
latch reset latch
latch reset
t
Over_Temp.emf
Figure 16
Over temperature detection
6.4
Infineon(R) INTELLIGENT LATCH - fault acknowledge and latch reset
The BTS50080-1EGA provides Infineon INTELLIGENT LATCH to avoid permanent resetting of a protective, latched switch off in PWM applications. To reset a latched protective switch off the fault has to be acknowledged by a falling edge at the DEN pin. For a reset signal it's recommended to set the DEN signal to HIGH for 20s before setting DEN to LOW for 20s. Please refer to Figure for details.
Datasheet
19
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Protection Functions
IN t DEN over temp. / short circuit VOUT t Ibb latch reset latch reset
fault_acknowledge .emf
t t
t
Infineon INTELLIGENT LATCH - fault acknowledge and latch reset
6.5
Reverse Polarity Protection - ReverSaveTM
The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the device offers ReverSaveTM functionality. Under reverse polarity condition, the output stage will be switched on, provided a sufficient gate to source voltage is generated VGSVGND_bb. Please refer to Figure 17 for details.
-V bb
control chip VBB base chip
V ON(rev)
V bb OUT GND
-IL
Figure 17 Reverse battery protection
LOAD
Reverse.emf
Use the following formula for estimation of overall power dissipation Pdiss(rev) in reverse polarity mode.
P
diss(rev)
R ON(rev) I L
2
Note: No protection mechanism is active during reverse polarity. The control chip is not functional. Potentials of logic pins can become negative. Affected pins have to be protected by means of series resistors.
Datasheet
20
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Protection Functions
6.6
ESD Protection
All logic pins have ESD protection. Beside the output clamp for the power stage as described in Section 5.5 there is a clamp mechanism implemented for pin IS. See Figure 18 for details.
V bb control chip DEN IS ESD protection IN base chip
OUT
GND
Figure 18 Over-Voltage Protection
OverVoltage .emf
6.7
Loss of Ground Protection
In case of complete loss of the device ground connections the BTS50080-1EGA securely changes to or remains in OFF state, if the sense resistor RIS is higher than 500.
6.8
Loss of Load Protection, Loss of Vbb Protection
In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is recommended to use a Z-diode, a varistor (VZa < 42 V) or Vbb clamping power switches with connected loads in parallel. In case of loss of Vbb connection with charged inductive loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor (VZb < 16 V, VZL+VD < 16 V, ). For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please refer to Figure 19 for details.
control chip
VBB base chip
control chip
VBB base chip
logic
LOAD
V Za
OUT
logic
V Zb
OUT
LOAD
VD VZL
V b b_ d isco n n e ct.e mf
GND
GND
V b b_ L o a d_ d isco n n e ct.e mf
Figure 19
Loss of Vbb
In case of complete loss of Vbb the BTS50080-1EGA remains in OFF state. Datasheet 21 V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Protection Functions
6.9
Electrical Characteristics: Protection Functions
Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Min. Over-Load Protection 6.9.1 6.9.1 6.9.2 6.9.3 Short circuit shutdown threshold (SCT) Limit Values Typ. 150 70 22 170
1)
Unit
Conditions
Max. 200 95 25 A A V C -
IL(SC)high
80 42 20 150
Short circuit shutdown threshold at IL(SC)low high battery voltages Supply voltage for reduced short circuit shutdown threshold1) Thermal shut down temperature
VIN = 5 V Vbb(0) < Vbb(SCT) VIN = 5 V Vbb(0) > Vbb(SCT)
Vbb(SCT) Tjt
Reverse Battery 6.9.4 On-State resistance in case of reverse polarity Vbb=-8V, Tj=150C 1) Vbb=-12V, Tj=150C Over-voltage protection Sense pin
RON(rev)
12 16 7 20 27 -
m
IL = -10A, RIS = 1 k
Over-Voltage 6.9.5
VIS(CL)
5.5
V
IIS = -2 mA
1) Not subject to production test, specified by design
Datasheet
22
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
7
7.1
Diagnostic Functions
Diagnosis Enable
For diagnosis purposes, the BTS50080-1EGA provides an Infineon ENHANCED SENSE signal at the pin IS.
In ON-State, diagnosis is allways enabled. Providing a low signal at the DEN pin will disable the reporting. In OFFstate, both, reporting and diagnosis can be disabled by a low signal at DEN pin. The pin IS will be set to tri-state mode when a low signal is provided at the DEN pin. A high signal at the DEN pin enables the reporting and the open load and short to battery diagnosis during OFF mode. A falling edge at the DEN resets a preceding latched output and reporting condition. Please see Figure 20 and Table 1 for details.
Vbb Vb ,IS VBB VD S
IN
1
0 1
I IS(fa u lt)
1 0
DEN IS
VIS ESD protection I L>I L( SC ) I IS reporting enable
current sense
I L/k IL IS
& 1 & &
open load diagnosis
I L(OL)
0 1
IL OUT
j>jT
S R
Q Q
1
V D S&
open load @OFF detection
R IS GND
INTELLIGENT LATCH GND
S e n se.e mf
Figure 20
Block Diagram: Diagnosis
Datasheet
23
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
Table 1
Truth Table
Input (IN) Level Output Level Diagnostic Output (IS) DEN = H DEN = L
Operation Mode
Normal Operation (ON) Inverse Operation (-IL) Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load Protective switch-off resulting from Short Circuit to GND or Over Temperature 1) Normal Operation (OFF) Inverse Operation (-IL) Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load
H
~Vbb >Vbb Z Z
Vbb ~Vbb
IIS = IL / kILIS
Z
Z
IIS(fault) IIS(fault) IISZ
IIS(fault)
X
Z
Z
L
Z >Vbb Z >Vbb-VDS(OL) Vbb-VDS(OL) Z
IIS(fault) IIS(fault)2), Z3) IIS(fault) Z IIS(fault) Z
Z
L = Low Level, H = High Level, Z = high impedance, only leakage provided, potential depends on external circuit 1) Output and fault reporting remains latched until falling DEN edge acknowledge. 2) Before fault acknowledgement and latch reset. 3) After fault acknowledgement and latch reset.
7.2
Diagnosis during ON
During normal operation, an enabled IS pin provides a sense current, which is proportional to the load current as long as Vb,IS>5V and as long as IIS*RISDatasheet
24
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
VIN VON
normal operation t
IL I L1
I L2
t
I IS 0.9*I IS 1 tsIS (O N ) I IS1
I IS2
I IS(lim )
t
0.1*IIS t sIS (L C) tsIS (o ff)
I IS(L L) t
S witch On .e m f
Figure 21
Timing of Diagnosis Signal in ON-state
The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to Figure 22 for details. A typical resistor RIS of 1 k is recommended (see also Chapter 6.7).
N ,/,6
PD[ W\S PLQ

Figure 22 Current sense ratio kILIS1)

$
,/
The diagnosis signal can be switched off by a low signal at the diagnosis enable pin DEN. See Figure 23 for details on the timing between the DEN pin and the diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at the pin DEN.
1) The curves show the behavior based on characterization data. The marked points are described in this Datasheet in Section 7.5 (Position 7.5.5).
Datasheet
25
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
IIS tsIS(DEN) DEN reset protective latch t
sense_enable .emf
tdIS(DEN)
t
Figure 23
Timing of Sense Enable Signal
During fault condition an enabled IS pin provides a defined fault current IIS(fault). Fault conditions are over-current, over-temperature and short circuit switch-off. Any protective switch-off during on-state causes a latched OFF of the output and reporting, until being reset by a falling edge at the pin DEN. See Figure 24 for details.
IN t DEN Short / Over Temp V OUT IIS latch reset IL/k ILIS latch IIS(fault) reset t t
fault acknowledge@ON .emf
t t
Figure 24
Fault acknowledge and latch reset
7.3
Diagnosis during OFF
During normal operation a disabled IS pin provides no current. In case of shorted load to battery, open load or inverse operation an enabled IS pin provides a defined fault current IIS(fault). See Figure 25 for details.
IN t DEN IOL VOUT IIS Vbb -V DS (OL) IIS (fault) t t td(OL)
fault@OFF.emf
t t
Figure 25
Fault reporting
Datasheet
26
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
7.4
Diagnosis Disable
In order to achieve minimum standby current, the IN pin and the DEN pin have to be low level. A possible preceding fault condition and reporting has to be reset by a falling edge at the pin DEN. See also Chapter 6.4 for details.
Datasheet
27
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
7.5
Electrical Characteristics: Diagnostic Functions
Note: Characteristics show the deviation of parameters at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. Parameter Symbol Min. Input characteristics for Diagnosis Enable 7.5.1 7.5.2 7.5.3 7.5.4 7.5.5 L-input level H-input level input hysteresis input pull down resistor Current sense ratio, static oncondition Limit Values Typ. 100 100 21 21 21 21 21 disabled Max. 1.0 5.5 200 25.6 27.5 31.5 74 - 10 mA V V mV k k - -
1)
Unit
Conditions
VDEN(L) VDEN(H) VDEN(hys) RDEN kILIS
-0.3 2.0 - 50 17 15 12.5 9
-
Load Current Sense
IL=40A IL=10A IL=5A IL=1.5A VIN = 0 (e.g. during de energizing of
inductive loads) 7.5.6 Sense saturation current 1)
VIN = VDEN = 5 V, IIS < IIS(lim), VIS < VZ,IS, Vb,IS > 5 V
-
IIS(lim)
3.5
6
7.5.7
Sense current under fault conditions
IIS(fault)
3.5
6
10
mA
VDEN = 5 V, VON < 400 mV, typ. Vb,IS > 5 V VDEN = 5 V, Vb,IS > 5 V, VON > 400 mV,typ.
or VOFF7.5.8 7.5.9
Current sense leakage current Current sense offset current Tj = -40 C, Tj = 25 C Tj = 150 C Current sense leakage, while diagnosis disabled
IIS(LL) IIS(LH)
- - -
0.1 8 18 1 350
0.5 30 60 2 700
A A
VIN=VDEN=0V VIN=VDEN=5V, IL 0A VIN = 5V, VDEN = 0V VIN = 0 5V (switchon),
7.5.10 7.5.11
IIS(dis)
- -
A s
Current sense settling time to 90% tsIS(ON)
IIS_stat.
1)
7.5.12
Current sense settling time to 10% tsIS(OFF)
-
8
30
IIS_stat.1)
s
VDEN = 5 V, RL = 0.5 VIN = 5 0V (switchoff),
7.5.13 7.5.14
Current sense settling time to 90% tsIS(LC)
- -
15 8
50 30
IIS_stat.1) IIS_stat.1)
Datasheet
s s
Current sense settling time to 90% tsIS(DEN)
VDEN = 5V, RL = 0.5 VIN=VDEN=5V, IL = 10 20A VIN = 5V,
OUT=ON, VDEN = 0 5V
28
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Diagnostic Functions
Vbb = 9 V to 16 V, Tj = -40 C to +150 C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 C
Pos. 7.5.15 Parameter Symbol Min. Current sense deactivation time to tdIS(DEN) 10% IIS_stat.1) Open load output current - Limit Values Typ. 2 Max. 20 s Unit Conditions
VIN = 5V, VDEN = 5 0V VIN = 0V, VDEN = 5V, VDS = 2V VIN = 0V, VDEN = 5V VIN = 5 0 V, VDEN = 5V, Vbb = 13.5V,
Open Load at OFF state 7.5.16
IL(OL)
3
5
10
mA
7.5.17 7.5.18
Open load detection threshold voltage Open load blanking after negative input slope1)
VDS(OL) td(OL)
2 -
2.8 0.3
3.5 1
V ms
1) Not subject to production test, specified by design
Datasheet
29
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Application schematic
8
Vbat +5V
Application schematic
Figure 26 shows an example for an application schematic.
47nF 10K C 10K 10K 47nF 1k VBB IN
BTS50080-1EGA
OUT LOAD
DEN IS GND
GND
a p p lica tio n_e xa m p le.e m f
Figure 26
application example
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
8.1
* * * *
Hints for PCB layout
Handling of NC pins: It is recommended to connect all NC pins on a defined potential. E.g. pin 7 and pin 12 could be connected to OUT potential, while pin 5 and 6 could be connected to OUT or DEN. EMC filter cap between Vbb and GND: It is recommended to place the filter cap as close as possible to the device to minimize the inductance of the loop. The resistors connecting C and IN-pin as well as C and DEN-pin are recommended to protect the C inputs against fast electrical transients. Ground shift: It is recommended to avoid a ground shift between C ground and device pin GND of more than 0.3V during normal operation.
8.2
* * * *
Further Application Information
Please contact us to get the Pin FMEA Please contact us to get a test report on short circuit robustness according to AEC Q100-012 Please contact us for Application Note "Diagnosis with BTS500x0-1EGA" For further information you may contact http://www.infineon.com/
Datasheet
30
V1.0, 2009-04-06
Smart High-Side Power Switch BTS50080-1EGA
Package Outlines
9
Package Outlines
7.5 0.11)
0 +0.1 STANDOFF
0.10.05 STANDOUT (1.55)
2.6 MAX.
2.35 0.1
35
B
+0.0 0.25 -0.0 75
0.8
C
12x 7.8 0.1 0.1 C (Heatslug) Seating Plane
0.1
0.7 0.15 10.3 0.3
(0.2) 0.25 B
Bottom View
12
7
7
12
Index Marking 12x 0.25
M
1
6
6
1
1.6 0.1
1 5.10.1 5x 1=5
Heatslug
CAB
0.4
+0.13
1) Does not include plastic or metal protrusion of 0.15 max. per side
PG-DSO-12-4, -5, -8, -11, -12, -16-PO V04
4.5
1.67
8.1
0.65 MAX. 1
PG-DSO-12-4, -5, -8, -11, -12, -16-FP V01
Figure 27
PG-DSO-12-16 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 31
9.4
Dimensions in mm V1.0, 2009-04-06
4.2 0.1
6.4 0.11)
A
5 3
Smart High-Side Power Switch BTS50080-1EGA
Revision History
10
Revision History
BTS50080-1EGA Revision History: V1.0, 2009-04-06 Version Datasheet Rev. 1.0 Date 2009-04-06 Changes Initial version of datasheet.
Datasheet
32
V1.0, 2009-04-06
Edition 2009-04-06 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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